Our Goal
Kubos is working towards developing low energy consuming LEDs using our proprietary cubic-GaN technology (Patent Pending) in order to bridge the under-developed region of the visible spectrum. The LED stacks with our technology can be easily integrated into the pre-existing commercial LED fabrication process enabling the increased efficiency of green LEDs and a reduction in the cost of LED lighting.
Our History
Kubos was formed to commercialise the technology first developed in a partnership between the University of Cambridge, who successfully grew cubic-GaN on 3C-SiC (cubic silicon carbide) on silicon wafers by MOCVD (metal oxide chemical vapour-phase deposition), and Anvil Semiconductors, who produced the underlying 3C-SiC layers using its patented stress relief IP that enables growth of device quality silicon carbide on 150 mm diameter silicon wafers. Together they created a world first technology for which Kubos has the exclusive transferable licence.
