Cubic-GaN Publications

Following are selective publications related to the research and development of cubic-GaN technology:

L. Y. Lee, M. Frentrup, P. Vacek, F. C.-P. Massabuau, M. J. Kappers, D. J. Wallis, and R. A. Oliver, “Investigation of MOVPE-grown zincblende GaN nucleation layers on 3C-SiC/Si substrates”, Journal of Crystal Growth 524, 125167 (2019); DOI: 10.1016/j.jcrysgro.2019.125167

L.Y. Lee, M. Frentrup, P. Vacek, M.J. Kappers, D.J. Wallis, and R.A. Oliver, “Investigation of stacking faults in MOVPE-grown zincblende GaN by XRD and TEM“, J. Appl. Phys. 125, 105303 (2019); DOI: 10.1063/1.5082846

L. Y. Lee, M. Frentrup, M.J. Kappers, R.A. Oliver, C.J. Humphreys, and D.J. Wallis, “Effect of growth temperature and V/III-ratio on the surface morphology of MOVPE-grown cubic zincblende GaN“, J. Appl. Phys. 124, 105302 (2018); DOI: 10.1063/1.5046801

S. A. Church, S. Hammersley, P. W. Mitchell, M. J. Kappers, L. Y. Lee, F. C.-P. Massabuau, S. L. Sahonta, M. Frentrup, L. J. Shaw, D. J. Wallis, C. J. Humphreys, R. A. Oliver, D. J. Binks, and P. Dawson, “Effect of stacking faults on the photoluminescence spectrum of zincblende GaN“, J. Appl. Phys. 123, 185705 (2018); DOI: 10.1063/1.5026267

Church, S. A., Hammersley, S., Mitchell, P. W., Kappers, M. J., Sahonta, S. L., Frentrup, M., Nilsson, D., Ward, P. J., Shaw, L. J., Wallis, D. J., Humphreys, C. J., Oliver, R. A., Binks, D. J., Dawson, P., “Photoluminescence studies of cubic GaN epilayers”, phys. stat. sol. b, 254, 1600733, (2017), DOI: 10.1002/pssb.201600733

Frentrup, M., Lee, L.Y., Sahonta, S.-L., Kappers, M.J., Massabuau, F., Gupta, P., Oliver, R.A., Humphreys, C.J., Wallis, D.J., “X-ray analysis of cubic zincblende III-nitrides“, J. Phys. D: Appl. Phys., 50 , 433002, (2017), DOI: 10.1088/1361-6463/aa865e

Lee, L. Y., “Cubic zincblende gallium nitride for green-wavelength light-emitting diodes“, Materials Science and Technology, (2017), DOI: 10.1080/02670836.2017.1300726