Cubic-GaN Publications

Following are selective publications related to the research and development of cubic-GaN technology:

2021
S. A. Church, M. Quinn, K. Cooley-Greene, B. Ding, A. Gundimeda, M. J. Kappers, M. Frentrup, D. J. Wallis, R. A. Oliver, and D. J. Binks, “Photoluminescence efficiency of zincblende InGaN/GaN quantum wells“, Journal of Applied Physics 129, 175702 (2021); https://doi.org/10.1063/5.0046649

Petr Vacek, Martin Frentrup, Lok Yi Lee, Fabien C.-P. Massabuau, Menno J. Kappers, David J. Wallis, Roman Gröger, and Rachel A. Oliver, “Defect structures in (001) zincblende GaN/3C-SiC nucleation layers”, Journal of Applied Physics 129, 155306 (2021); DOI: https://doi.org/10.1063/5.0036366

2020
B. Ding, M. Frentrup, S. M. Fairclough, M. J. Kappers, M. Jain, A. Kovács, D. J. Wallis, and R. A. Oliver, “Alloy segregation at stacking faults in zincblende GaN heterostructures”, Journal of Applied Physics 128, 145703 (2020); DOI: https://doi.org/10.1063/5.0015157

S. A. Church, B. Ding, P. W. Mitchell, M. J. Kappers, M. Frentrup, G. Kusch, S. M. Fairclough, D. J. Wallis, R. A. Oliver, and D. J. Binks, “Stacking fault-associated polarized surface-emitted photoluminescence from zincblende InGaN/GaN quantum wells,” Appl. Phys. Lett. 117, 032103 (2020); DOI: https://doi.org/10.1063/5.0012131

2019
L. Y. Lee, M. Frentrup, P. Vacek, F. C.-P. Massabuau, M. J. Kappers, D. J. Wallis, and R. A. Oliver, “Investigation of MOVPE-grown zincblende GaN nucleation layers on 3C-SiC/Si substrates”, Journal of Crystal Growth 524, 125167 (2019); DOI: 10.1016/j.jcrysgro.2019.125167

L.Y. Lee, M. Frentrup, P. Vacek, M.J. Kappers, D.J. Wallis, and R.A. Oliver, “Investigation of stacking faults in MOVPE-grown zincblende GaN by XRD and TEM“, J. Appl. Phys. 125, 105303 (2019); DOI: 10.1063/1.5082846

2018
L. Y. Lee, M. Frentrup, M.J. Kappers, R.A. Oliver, C.J. Humphreys, and D.J. Wallis, “Effect of growth temperature and V/III-ratio on the surface morphology of MOVPE-grown cubic zincblende GaN“, J. Appl. Phys. 124, 105302 (2018); DOI: 10.1063/1.5046801

S. A. Church, S. Hammersley, P. W. Mitchell, M. J. Kappers, L. Y. Lee, F. C.-P. Massabuau, S. L. Sahonta, M. Frentrup, L. J. Shaw, D. J. Wallis, C. J. Humphreys, R. A. Oliver, D. J. Binks, and P. Dawson, “Effect of stacking faults on the photoluminescence spectrum of zincblende GaN“, J. Appl. Phys. 123, 185705 (2018); DOI: 10.1063/1.5026267

2017
Church, S. A., Hammersley, S., Mitchell, P. W., Kappers, M. J., Sahonta, S. L., Frentrup, M., Nilsson, D., Ward, P. J., Shaw, L. J., Wallis, D. J., Humphreys, C. J., Oliver, R. A., Binks, D. J., Dawson, P., “Photoluminescence studies of cubic GaN epilayers”, phys. stat. sol. b, 254, 1600733, (2017), DOI: 10.1002/pssb.201600733

Frentrup, M., Lee, L.Y., Sahonta, S.-L., Kappers, M.J., Massabuau, F., Gupta, P., Oliver, R.A., Humphreys, C.J., Wallis, D.J., “X-ray analysis of cubic zincblende III-nitrides“, J. Phys. D: Appl. Phys., 50 , 433002, (2017), DOI: 10.1088/1361-6463/aa865e

Lee, L. Y., “Cubic zincblende gallium nitride for green-wavelength light-emitting diodes“, Materials Science and Technology, (2017), DOI: 10.1080/02670836.2017.1300726