Kubos’ proprietary and disruptive cubic-GaN on 3C-SiC/Si is fully compatible with standard LED development process on large Substrates for manufacturing high performance LEDs.
Kubos’ technology circumvents the performance limiting issues because LEDs based on our cubic- InGaN/GaN show minimal Quantum Confined Stark Effect (QCSE) compared with conventional hexagonal nitride technology. In addition, it avoids the concern relating to poor carrier confinement and the potential for the material to have an indirect bandgap which impacts phosphide based devices. In comparison to hexagonal-GaN technology, cubic LEDs require less indium in the InGaN QW layer to achieve long wavelength emission. This is a benefit over LEDs produced in both non- and semi- polar GaN.