The Cambridge Centre for Gallium Nitride conduct world leading research into nitride based III-V semiconductors: material quality, characterisation and device development. Researchers in the department first developed cubic GaN on 3C-SiC under an Innovate UK project and Kubos still have a strong collaboration with the University with development continuing in partnership under an Energy Entrepreneurs (Dept of Business Energy and Industrial Strategy) grant. Kubos has an exclusive licence to this technology.
Anvil developed the growth of 3C-SiC-on-Si wafers for use in power devices. Kubos has an exclusive license to this technology as a template for the growth of group III nitrides.
Kubos’ 3C-SiC/Si wafers are produced and polished at the ST in Norrköping, Sweden. ST has many years of extensive SiC experience andis a state of the art manufacturer of conductive and semi-insulating silicon carbide wafers and SiC single-crystal epitaxial layers deposited by CVD epitaxy.
The Compound Semiconductor Centre (CSC) provides cutting-edge facilities that help researchers and industry work together to deliver novel IP in advanced semiconductor technology. CSC provide Kubos with epitaxial material growth facilities for cubic-GaN development and wafer production, and are in a position to support Kubos through volume ramp-up as required.
Institute for Compound Semiconductors (ICS) in Cardiff University is a key service provider for Kubos in fabrication of cubic-GaN LEDs in their state-of-the-art cleanroom facilities.